Extended Defects in Germanium

Deals with all aspects of defects in Ge, an element which is gaining importance again in semiconductor technology Discusses all kinds of expanded defects in Ge, such as dislocation, stacking faults, twins, grain boundaries and bubbles on a crystallographic basis Systematically presentation of defects creation and its influence on device properties Appeals mainly to researchers and engineers but is also suitable for graduate students working in this field Includes supplementary material: sn.pub/extras

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