III-Nitride Electronic Devices
Autor: | Rongming Chu, Keisuke Shinohara |
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EAN: | 9780128175453 |
eBook Format: | ePUB/PDF |
Sprache: | Englisch |
Produktart: | eBook |
Veröffentlichungsdatum: | 18.10.2019 |
Kategorie: | |
Schlagworte: | AlGaN AlN AlScN) High Electron Mobility Transistor (HEMT) III-Nitride electronic materials and devices (GaN InAlN MMIC Microwave Millimeter-Wave Power electronics |
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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. - Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics - Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies - Written by a panel of academic and industry experts in each field