Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Nominated as an outstanding Ph.D. thesis by the Universidad Complutense de Madrid, Madrid, SpainProvides basic research in a novel material based on silicon, which is later integrated into an industrial CMOS Image Sensor prototypePresents a methodology to combine two fast, non-destructive and reliable techniques to quickly identify the fast melting and solidification regimes after a nanosecond laser process

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