The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Autor: | Zhiqiang Li |
---|---|
EAN: | 9783662496831 |
eBook Format: | |
Sprache: | Englisch |
Produktart: | eBook |
Veröffentlichungsdatum: | 24.03.2016 |
Kategorie: | |
Schlagworte: | Contact resistance Dopant activation Dopant segregation Germanium-based MOSFET MOS device Nickel germanide Source and drain Thermal stability |
85,59 €*
Versandkostenfrei
Die Verfügbarkeit wird nach ihrer Bestellung bei uns geprüft.
Bücher sind in der Regel innerhalb von 1-2 Werktagen abholbereit.
Dr. Li received his Bachelor degree of Science from Sichuan University in 2009, and Ph.D from Peking University in 2014
Prizes and awards:
2009-2014, Peking University
Leo KoGuan Scholarship, Chenming Hu Scholarship, Merit Student, Creative Talent Award.
2005-2009, Sichuan University
National Scholarship (twice), National Encouragement Scholarship, Xinyuan Scholarship (twice),
Comprehensive First-class Scholarship, Excellent Student Leader.
Publications:
1. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, 'Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion-Implantation after Germanidation Technique,' IEEE Electron Device Lett.,vol. 33, no. 12, pp. 1687-1689, Dec. 2012.
2. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, 'Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation,' IEEE Electron Device Lett., vol. 34, no. 5, pp. 596-598, May. 2013.
3. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Min Li, Ming Li, Xing Zhang, and Ru Huang, 'Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n?/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique,' IEEE Electron Device Lett., vol. 34, no. 9, pp. 1097-1099, Sep. 2013.
4. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Xing Zhang and Ru Huang, 'Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film,' ECS Solid State Lett., Vol. 1, no. 4, pp. Q33-Q34, 2012.
5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, 'Study on Schottky Barrier Modulation of NiGe/Ge by Ion-implantation after Germanidation Technique,' The 11th ICSICT, Xi'an, 2012.